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 0.5 CMOS 1.65 V to 3.6 V Dual SPDT/2:1 MUX ADG836L
FEATURES
0.5 typical on resistance 0.8 maximum on resistance at 125C 1.65 V to 3.6 V operation Automotive temperature range: -40C to +125C Guaranteed leakage specifications up to 125C High current carrying capability: 300 mA continuous Rail-to-rail switching operation Fast switching times <20 ns Typical power consumption: <0.1 W
FUNCTIONAL BLOCK DIAGRAM
ADG836L
S1A D1 S1B IN1 IN2 S2A D2 S2B
04753-0-001
APPLICATIONS
Cellular phones PDAs MP3 players Power routing Battery-powered systems PCMCIA cards Modems Audio and video signal routing Communication systems
SWITCHES SHOWN FOR A LOGIC 1 INPUT
Figure 1.
GENERAL DESCRIPTION
The ADG836L is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 over the full temperature range. The ADG836L is fully specified for 3.3 V, 2.5 V, and 1.8 V supply operation. Each switch conducts equally well in both directions when on and has an input signal range that extends to the supplies. The ADG836L exhibits break-before-make switching action. The ADG836L is available in a 10-lead package.
PRODUCT HIGHLIGHTS
1. 2. 3. 4. 5. 6. Less than 0.8 over full temperature range of -40C to +125C. Single 1.65 V to 3.6 V operation. Compatible with 1.8 V CMOS logic. High current handling capability (300 mA continuous current at 3.3 V). Low THD + N (0.02% typ). Small 10-lead MSOP package.
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.326.8703 (c) 2004 Analog Devices, Inc. All rights reserved.
ADG836L TABLE OF CONTENTS
Specifications..................................................................................... 3 Absolute Maximum Ratings............................................................ 6 Truth Table ........................................................................................ 6 Pin Terminology ............................................................................... 7 Typical Performance Characteristics ............................................. 8 Test Circuits..................................................................................... 11 Outline Dimensions ....................................................................... 13 Ordering Guide........................................................................... 14
REVISION HISTORY 5/04--Data Sheet Changed from Rev. 0 to Rev. A Updated Ordering Guide............................................................... 14 4/04--Revision 0: Initial Version
Rev. A | Page 2 of 16
ADG836L SPECIFICATIONS
Table 1. VDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.1
Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Match between Channels (RON) On Resistance Flatness (RFLAT (ON)) LEAKAGE CURRENTS Source Off Leakage IS (OFF) Channel On Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current, IINL or IINH CIN, Digital Input Capacitance DYNAMIC CHARACTERISTICS2 tON tOFF Break-before-Make Time Delay (tBBM) Charge Injection Off Isolation Channel-to-Channel Crosstalk +25C -40C - +85C -40C - +125C 0 V to VDD 0.5 0.65 0.04 0.1 0.15 0.2 1 0.2 1 0.16 0.75 0.075 0.8 0.08 Unit V typ max typ max typ max nA typ nA max nA typ nA max V min V max A typ A max pF typ ns typ ns max ns typ ns max ns typ ns min pC typ dB typ dB typ dB typ % dB typ MHz typ pF typ pF typ A typ A max Test Conditions/Comments VDD = 2.7 V VDD = 2.7 V, VS = 0 V to VDD, IS = 10 mA (Figure 18) VDD = 2.7 V, VS = 0.65 V, IS = 10 mA VDD = 2.7 V, VS = 0 V to VDD, IS = 10 mA VDD = 3.6 V VS = 0.6 V/3.3 V, VD = 3.3 V/0.6 V (Figure 19) VS = VD = 0.6 V or 3.3 V (Figure 20)
10 15
100 120 2 0.8
0.005 0.1 4 21 26 4 7 17
VIN = VINL or VINH
28 8
29 9
RL = 50 , CL = 35 pF VS = 1.5 V/0 V (Figure 21) RL = 50 , CL = 35 pF VS = 1.5 V (Figure 21) RL = 50 , CL = 35 pF VS1 = VS2 = 1.5 V (Figure 22) VS = 1.5 V, RS = 0 , CL = 1 nF (Figure 23) RL = 50 , CL = 5 pF, f = 100 kHz (Figure 24) S1A-S2A/S1B-S2B (Figure 27) RL = 50 , CL = 5 pF, f = 100 kHz S1A-S1B/S2A-S2B (Figure 26) RL = 50 , CL = 5 pF, f = 100 kHz RL = 32 , f = 20 Hz to 20 kHz, VS = 2 V p-p RL = 50 , CL = 5 pF (Figure 25) RL = 50 , CL = 5 pF (Figure 25)
5 40 -67 -90 -67 Total Harmonic Distortion (THD + N) Insertion Loss -3 dB Bandwidth CS (OFF) CD, CS (ON) POWER REQUIREMENTS IDD 0.02 -0.05 57 25 75 0.003 1
Temperature range for Y version is -40C to +125C. Guaranteed by design, not subject to production test.
VDD = 3.6 V Digital inputs = 0 V or 3.6 V
4
1 2
Rev. A | Page 3 of 16
ADG836L
Table 2. VDD = 2.5 V 0.2 V, GND = 0 V, unless otherwise noted.1
Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Match between Channels (RON) On Resistance Flatness (RFLAT (ON)) LEAKAGE CURRENTS Source Off Leakage IS (OFF) Channel On Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH CIN, Digital Input Capacitance DYNAMIC CHARACTERISTICS2 tON tOFF Break-before-Make Time Delay (tBBM) Charge Injection Off Isolation Channel-to-Channel Crosstalk +25C -40C - +85C -40C - +125C 0 V to VDD 0.65 0.72 0.04 0.16 0.23 0.2 0.4 0.2 0.6 0.24 0.8 0.08 0.88 0.085 Unit V typ max typ max typ max nA typ nA max nA typ nA max V min V max A typ A max pF typ ns typ ns max ns typ ns max ns typ ns min pC typ dB typ dB typ dB typ % dB typ MHz typ pF typ pF typ A typ A max VIN = VINL or VINH Test Conditions/Comments
VDD = 2.3 V, VS = 0 V to VDD, IS = 10 mA (Figure 18) VDD = 2.3 V, VS = 0.7 V, IS = 10 mA VDD = 2.3 V, VS = 0 V to VDD, IS = 10 mA VDD = 2.7 V VS = 0.6 V/2.4 V, VD = 2.4 V/0.6 V (Figure 19) VS = VD = 0.6 V or 2.4 V (Figure 20)
4 12
45 90 1.7 0.7
0.005 0.1 4 23 29 5 7 17
30 8
31 9
RL = 50 , CL = 35 pF VS = 1.5 V/0 V (Figure 21) RL = 50 , CL = 35 pF VS = 1.5 V (Figure 21) RL = 50 , CL = 35 pF VS1 = VS2 = 1.5 V (Figure 22) VS = 1.25 V, RS = 0 , CL = 1 nF (Figure 23) RL = 50 , CL = 5 pF, f = 100 kHz (Figure 24) S1A-S2A/S1B-S2B; RL = 50 V, CL = 5 pF, f = 100 kHz;Figure 27 S1A-S1B/S2A-S2B; RL = 50 , CL = 5 pF, f = 100 kHz Figure 25 RL = 32 , f = 20 Hz to 20 kHz, VS = 1.5 V p-p RL = 50 , CL = 5 pF (Figure 25) RL = 50 , CL = 5 pF (Figure 25)
5 30 -67 -90 -67 Total Harmonic Distortion (THD + N) Insertion Loss -3 dB Bandwidth CS (OFF) CD, CS (ON) POWER REQUIREMENTS IDD 0.022 -0.06 57 25 75 0.003 1
Temperature range for Y version is -40C to +125C. Guaranteed by design, not subject to production test.
VDD = 2.7 V Digital inputs = 0 V or 2.7 V
4
1 2
Rev. A | Page 4 of 16
ADG836L
Table 3. VDD = 1.65 V 1.95 V, GND = 0 V, unless otherwise noted.1
Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) +25C -40C - +85C -40C - +125C 0 V to VDD 1 1.4 2 0.1 2.2 4 2.2 4 Unit V typ max typ typ Test Conditions/Comments
On Resistance Match between Channels (RON) LEAKAGE CURRENTS Source Off Leakage IS (OFF) Channel On Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH CIN, Digital Input Capacitance DYNAMIC CHARACTERISTICS2 tON tOFF Break-before-Make Time Delay (tBBM) Charge Injection Off Isolation Channel-to-Channel Crosstalk
VDD = 1.8 V, VS = 0 V to VDD, IS = 10 mA (Figure 18) VDD = 1.65 V, VS = 0 V to VDD, IS = 10 mA VDD = 1.65 V, VS = 0.7 V, IS = 10 mA VDD = 1.95 V VS = 0.6 V/1.65 V, VD = 1.65 V/0.6 V (Figure 19) VS = VD = 0.6 V or 1.65 V Figure 20
0.2 0.4 0.2 0.6
4 10
25 75 0.65 VDD 0.35 VDD
nA typ nA max nA typ nA max V min V max A typ A max pF typ ns typ ns max ns typ ns max ns typ ns min pC typ dB typ dB typ
0.005 0.1 4 28 37 7 9 21
VIN = VINL or VINH
38 10
39 11
RL = 50 , CL = 35 pF VS = 1.5 /0 V (Figure 21) RL = 50 , CL = 35 pF VS = 1.5 V (Figure 21) RL = 50 , CL = 35 pF VS1 = VS2 = 1 V (Figure 22) VS = 1 V, RS = 0 V, CL = 1 nF (Figure 23) RL = 50 , CL = 5 pF, f = 100 kHz, (Figure 24) S1A-S2A/S1B-S2B; RL = 50 , CL = 5 pF, f = 100 kHz (Figure 27) S1A-S1B/S2A-S2B; RL = 50 , CL = 5 pF, f = 100 kHz (Figure 25) RL = 32 , f = 20 Hz to 20 kHz, VS = 1.2 V p-p RL = 50 , CL = 5 pF (Figure 25) RL = 50 , CL = 5 pF (Figure 25)
5 20 -67 -90
-67
dB typ
Total Harmonic Distortion (THD + N) Insertion Loss -3 dB Bandwidth CS (OFF) CD, CS (ON) POWER REQUIREMENTS IDD
0.14 -0.08 57 25 75 0.003 1.0 4
% dB typ MHz typ pF typ pF typ A typ A max
VDD = 1.95 V Digital inputs = 0 V or 1.95 V
1 2
Temperature range for Y version is -40C to +125C. Guaranteed by design, not subject to production test.
Rev. A | Page 5 of 16
ADG836L ABSOLUTE MAXIMUM RATINGS
TA = 25C, unless otherwise noted. Table 4.
Parameter VDD to GND Analog Inputs1 Digital Inputs1 Peak Current, S or D 3.3 V Operation 2.5 V Operation 1.8 V Operation Continuous Current, S or D 3.3 V Operation 2.5 V Operation 1.8 V Operation Operating Temperature Range Automotive (Y Version) Storage Temperature Range Junction Temperature MSOP Package JA Thermal Impedance JC Thermal Impedance IR Reflow, Peak Temperature <20 sec Rating -0.3 V to +4.6 V -0.3 V to VDD + 0.3 V -0.3 V to 4.6 V or 10 mA, whichever occurs first 500 mA 460 mA 420 mA (pulsed at 1 ms, 10% Duty Cycle Max) 300 mA 275 mA 250 mA -40C to +125C -65C to +150C 150C 206C/W 44C/W 235C
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time.
TRUTH TABLE
Table 5.
Logic 0 1 Switch A Off On Switch B On Off
1
Overvoltages at IN, S, or D are clamped by internal diodes. Current should be limited to the maximum ratings given.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
Rev. A | Page 6 of 6
ADG836L PIN TERMINOLOGY
IN1 1 S1A 2 10 D1 9 S1B TOP VIEW GND 3 (Not to Scale) 8 VDD S2A 4 IN2 5 7 S2B 6 D2
04753-0-002
ADG836L
Figure 2. 10-Lead MSOP (RM-10)
Table 6.
Mnemonic VDD IDD GND S D IN VD (VS) RON RFLAT (ON) RON IS (OFF) ID (OFF) ID, IS (ON) VINL VINH IINL (IINH) CS (OFF) CD (OFF) CD, CS (ON) CIN tON tOFF tBBM Charge Injection Off Isolation Crosstalk -3 dB Bandwidth On Response Insertion Loss THD + N Description Most positive power supply potential. Positive supply current. Ground (0 V) reference. Source terminal. May be an input or output. Drain terminal. May be an input or output. Logic control input. Analog voltage on terminals D and S. Ohmic resistance between terminals D and S. Flatness is defined as the difference between the maximum and minimum value of on resistance as measured On resistance match between any two channels. Source leakage current with the switch off. Drain leakage current with the switch off. Channel leakage current with the switch on. Maximum input voltage for Logic 0. Minimum input voltage for Logic 1. Input current of the digital input. Off switch source capacitance. Measured with reference to ground. Off switch drain capacitance. Measured with reference to ground. On switch capacitance. Measured with reference to ground. Digital input capacitance. Delay time between the 50% and the 90% points of the digital input and switch on condition. Delay time between the 50% and the 90% points of the digital input and switch off condition. On or off time measured between the 80% points of both switches when switching from one to another. A measure of the glitch impulse transferred from the digital input to the analog output during on-off switching. A measure of unwanted signal coupling through an off switch. A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance. The frequency at which the output is attenuated by 3 dB. The frequency response of the on switch. The loss due to the on resistance of the switch. The ratio of the harmonic amplitudes plus noise of a signal, to the fundamental.
Rev. A | Page 7 of 16
ADG836L TYPICAL PERFORMANCE CHARACTERISTICS
0.60 TA = 25C 0.55 VDD = 3V 0.50
ON RESISTANCE ()
ON RESISTANCE ()
0.8 +125C +85C 1.2 VDD = 3.3V
VDD = 2.7V
1.0
0.45 0.40 VDD = 3.6V 0.35 0.30 0.25 0.20 0 0.5 1.0 1.5 2.0 VD, VS (V) 2.5 3.0 3.5
04449-0-004
0.6
VDD = 3.3V
0.4 +25C -40C
04449-0-007
0.2
0 0 0.5 1.0 1.5 2.0 2.5 3.0 VD, VS (V)
Figure 3. On Resistance vs. VD (VS), VDD = 2.7 V to 3.6 V
0.8 TA = 25C 0.7 VDD = 2.3V
ON RESISTANCE ()
1.0 1.2
Figure 6. On Resistance vs. VD (VS) for Different Temperature, VDD = 3.3 V
VDD = 2.5V
ON RESISTANCE ()
+125C 0.8 +85C 0.6 +25C -40C
0.6
0.5 VDD = 2.5V VDD = 2.7V 0.4
0.4
0.2 0 0.5 1.0 1.5 VD, VS (V) 2.0 2.5
04449-0-005
0 0 0.5 1.0 1.5 VD, VS (V) 2.0
2.5
Figure 4. On Resistance vs. VD (VS), VDD = 2.5 V 0.2 V
1.8 TA = 25C 1.6 1.4 VDD = 1.65V 1.2 1.4
Figure 7. On Resistance vs. VD (VS) for Different Temperature, VDD = 2.5 V
VDD = 1.8V +25C +125C -40C
ON RESISTANCE ()
1.2 VDD = 1.8V 1.0 0.8 0.6 VDD = 1.95V 0.4 0.2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VD, VS (V)
04449-0-006
ON RESISTANCE ()
1.0 0.8
0.7 0.5 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VD, VS (V) +85C
1.8
Figure 5. On Resistance vs. VD (VS), VDD = 1.8 V to 0.15 V
Figure 8. On Resistance vs. VD (VS) for Different Temperature, VDD = 1.8 V
Rev. A | Page 8 of 16
04449-0-009
04449-0-008
0.3
0.2
ADG836L
80 VDD = 3.3V 60 ID, IS (ON) 40 90 80 70 60 20 TA = 25C
CURRENT (nA)
QINJ (pC)
50 40 VCC = 3.3V 30 20 VCC = 2.5V VCC = 1.8V
04449-0-013
0 -20 IS (OFF) -40 -60 -80 0 20 40 60 80 100 120 TEMPERATURE (C)
04449-0-010
10 0 0 0.5 1.0 1.5 VS (V) 2.0 2.5 3.0 3.5
Figure 9. Leakage Current vs. Temperature, VDD = 3.3 V
Figure 12. Charge Injection vs. Source Voltage
60 VDD = 2.5V 50
35
30
40 30
tON
VDD = 1.8V
25
ID, IS (ON)
CURRENT (nA)
VDD = 2.5V VDD = 3V
TIME (ns)
20 10 0 -10 -20 -30 -40 0 20 40 60 80 100 120 TEMPERATURE (C) IS (OFF)
04449-0-011
20 15
10
VDD = 2.5V
tOFF
5
VDD = 1.8V VDD = 3V
04449-0-014
0 -40
20
0
20
40
60
80
100
120
TEMPERATURE (C)
Figure 10. Leakage Current vs. Temperature, VDD = 2.5 V
Figure 13. tON/tOFF Times vs. Temperature
50 VDD = 1.8V 40
1 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10
04449-0-012
ATTENUATION (dB)
30
CURRENT (nA)
IS, ID (ON) 20
TA = 25C VCC = 3.3V/2.5V/1.8V
10
0 IS (OFF) -10
-12 -13 0.01 0.1 1 10 100
-20
0
20
40
60
80
100
120
1000
TEMPERATURE (C)
FREQUENCY (MHz)
Figure 11. Leakage Current vs. Temperature, VDD = 1.8 V
Figure 14. Bandwidth
Rev. A | Page 9 of 16
04449-0-015
-11
ADG836L
0 -10 -20
0.10 VDD = 2.5V TA = 25C S1A-D1 32V LOAD 0.08 1.5V p-p
TA = 25C VCC = 3.3V/2.5V/1.8V
ATTENUATION (dB)
THD + N (%)
-30 -40 -50 -60
0.06
0.04
0.02
-70 -80 0.01
04449-0-016
0.1
1
10
100
1000
0 20
50
100
200
500
1k
2k
5k
10k
20k
FREQUENCY (MHz)
FREQUENCY (Hz)
Figure 15. Off Isolation vs. Frequency
Figure 17. Total Harmonic Distortion + Noise
-10 S1A-S1B -20 -30 TA = 25C VCC = 3.3V/2.5V/1.8V S1A-S2A -50 -60 -70 -80 -90 -100 0.01
04449-0-017
ATTENUATION (dB)
-40
0.1
1
10
100
1000
FREQUENCY (MHz)
Figure 16. Crosstalk vs. Frequency
Rev. A | Page 10 of 16
04449-0-018
ADG836L TEST CIRCUITS
IDS
V1 IS (OFF) S D
04449-0-019
ID (OFF) S D A
04449-0-020
A VS
ID (ON) NC A VD
04449-0-021
S
D
VS
RON = V1/IDS
VD
Figure 18. On Resistance
Figure 19. Off Leakage
Figure 20. On Leakage
VDD 0.1F
VDD VS S1B S1A D RL 50 GND VOUT CL 35pF VOUT VIN 50% 50%
IN
90%
90%
04449-0-022
tON
tOFF
Figure 21. Switching Times, tON, tOFF
VDD 0.1F 50% VDD VS S1B S1A D RL IN GND 50 VOUT CL 35pF VIN VOUT 80% 80% 0V 50%
tBBM
tBBM
04449-0-023
Figure 22. Break-before-Make Time Delay, tBBM
VDD SW ON S1B VS IN GND D S1A 1nF VOUT VOUT QINJ = CL x VOUT
04449-0-024
SW OFF
VIN NC VOUT
Figure 23. Charge Injection
Rev. A | Page 11 of 16
ADG836L
VDD 0.1F NETWORK ANALYZER
VOUT VDD 0.1F
VDD
VDD S1A RL 50 S1B 50
04449-0-025
NC
S1B D
S1A
50
50 VS VOUT
D
RL 50
RL 50 GND
VS GND
OFF ISOLATION = 20 LOG
VOUT VS
CHANNEL-TO-CHANNEL CROSSTALK = 20 LOG
VOUT VS
Figure 24. Off Isolation
Figure 25. Channel-to-Channel Crosstalk (S1A-S1B)
VDD 0.1F NETWORK ANALYZER 50 VS D
04449-0-026
VDD
NETWORK ANALYZER VOUT 50 S2A S2B S1A S1B
D2
S1B
S1A
GND
RL 50
VOUT
D1 NC 50
50 VS
04449-0-027
NC
INSERTION LOSS = 20 LOG
VOUT WITH SWITCH VOUT WITHOUT SWITCH
CHANNEL-TO-CHANNEL CROSSTALK = 20 LOG
VOUT VS
Figure 26. Bandwidth
Figure 27. Channel-to-Channel Crosstalk (S1A-S2A)
Rev. A | Page 12 of 16
04449-0-028
ADG836L OUTLINE DIMENSIONS
3.00 BSC
10 6
3.00 BSC
1 5
4.90 BSC
PIN 1 0.50 BSC 0.95 0.85 0.75 0.15 0.00 0.27 0.17 COPLANARITY 0.10 COMPLIANT TO JEDEC STANDARDS MO-187BA 1.10 MAX 8 0 0.80 0.60 0.40
SEATING PLANE
0.23 0.08
Figure 28. 10-Lead Mini Small Outline Package [MSOP] (RM-10) Dimensions shown in millimeters
Rev. A | Page 13 of 16
ADG836L
ORDERING GUIDE
Model ADG836LYRM ADG836LYRM-REEL ADG836LYRM-REEL7 Temperature Range -40C to +125C -40C to +125C -40C to +125C Package Description Mini Small Outline Package (MSOP) Mini Small Outline Package (MSOP) Mini Small Outline Package (MSOP) Package Option RM-10 RM-10 RM-10 Branding SQA SQA SQA
Rev. A | Page 14 of 16
ADG836L NOTES
Rev. A | Page 15 of 16
ADG836L NOTES
(c) 2004 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D04753-0-5/04(A)
Rev. A | Page 16 of 16
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